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SHINDENGEN
Schottky Rectifiers (SBD)
Single
M1FS6 60 1.2A V
FEATURES *oe Small SMT *oe Tj150*Z *oe Low VF=0.45V *oe PRRSM avalanche guaranteed APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommuniction
Case : M1F Case :
Unit : mm
RATINGS
*oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 60 V Repetitive Peak Surge Reverse VoltagePulse width 0.5ms, duty 1/40 V RRSM 65 V Average Rectified Forward Current 50Hz sine wave, R-load Ta=25*Z*@On alumina substrate A IO 1.2 50Hz sine wave, R-load Ta=25*Z*@On glass-epoxy0.75 substrate Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z A 40 Repetitive Peak Surge Reverse Power Pulse width 10Es, Tj=25*Z PRRSM 60 W *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Forward Voltage VF IF =1.1A, Pulse measurement Reverse Current IR V=60V R , Pulse measurement Junction Capacitance R =10V Cj f=1MHz, V AEjl junction to lead Thermal Resistance AEja junction to ambient*@On alumina substrate junction to ambient*@On glass-epoxy substrate Ratings Unit Max.0.58 V Max.1.0 mA Typ.53 pF Max.20 Max.108 *Z/W Max.186
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
M1FS6
10
Forward Voltage
Forward Current IF [A]
Tl=150C [MAX] 1 Tl=150C [TYP] Tl=25C [MAX] Tl=25C [TYP]
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage VF [V]
M1FS6
Junction Capacitance
f=1MHz Tl=25C TYP
Junction Capacitance Cj [pF]
100
10 0.1 1
10
Reverse Voltage VR [V]
M1FS6
100
Reverse Current
Tl=150C [MAX]
Tl=150C [TYP]
10 Tl=125C [TYP]
Reverse Current IR [mA]
Tl=100C [TYP] 1
Tl=75C [TYP]
0.1
Pulse measurement per diode
0.01
0
10
20
30
40
50
60
Reverse Voltage VR [V]
M1FS6
3.5
Reverse Power Dissipation
Reverse Power Dissipation PR [W]
3
2.5
DC D=0.05 0.1 0.2
2
0.3
1.5
0.5
1 SIN 0.5 0.8
0
0
10
20
30
40
50
60
70
Reverse Voltage VR [V]
Tj = 150C
0 VR tp D=tp /T T
M1FS6
1.4
Forward Power Dissipation
DC
Forward Power Dissipation PF [W]
1.2 SIN 0.2 0.8 0.05 0.6 0.1 0.3 0.5
D=0.8
1
0.4
0.2
0
0
0.5
1
1.5
2
Average Rectified Forward Current IO [A]
Tj = 150C IO 0 tp D=tp /T T
M1FS6
2.4
Derating Curve
Average Rectified Forward Current IO [A]
2
DC D=0.8
Alumina substrate Soldering land 2mm Conductor layer 20m Substrate thickness 0.64mm
1.6 0.5 1.2 0.3 0.8 0.2 0.1 0.4 0.05 SIN
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [C]
VR = 30V 0 0
IO
VR tp D=tp /T T
M1FS6
1.4
Derating Curve
Average Rectified Forward Current IO [A]
1.2
DC D=0.8
Glass-epoxy substrate Soldering land 2mm Conductor layer 35m
1
0.8
0.5
SIN
0.6 0.3 0.4 0.2 0.1 0.2 0.05 0 0 20 40 60 80 100 120 140 160
Ambient Temperature Ta [C]
VR = 30V 0 0
IO
VR tp D=tp /T T
M1FS6
50
Peak Surge Forward Capability
IFSM
10ms 10ms
1 cycle
40
Peak Surge Forward Current IFSM [A]
non-repetitive, sine wave, Tj=25C before surge current is applied
30
20
10
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
SBD
120
Repetitive Surge Reverse Power Derating Curve
100
PRRSM Derating [%]
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [C]
IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP
SBD
10
Repetitive Surge Reverse Power Capability
PRRSM p) / PRRSM p=10s) Ratio (t (t
1
0.1
1
10
100
Pulse Width t p [s]
IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP

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